Semiconductor device having an interconnection of a laminate str

Details Semiconductor device having an interconnection of a laminate str Semiconductor device having an interconnection of a laminate str

1995-02-23

1996-07-23

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257753, 257915, H01L 2348

Patent

active

055392563

ABSTRACT:
A metallic interconnection has a laminate structure including a Ti film, a TiN film, a Cu--Ti compound film and a Cu alloy film containing Cu and a small amount of other metallic elements, the films being consecutively formed on a SiO.sub.2 film located on a semiconductor substrate. A W film covers the surface of the laminate structure. The Cu--Ti compound film is formed by sputtering a Ti and a Cu alloy targets followed by a subsequent heat treatment or by sputtering Cu--Ti alloy target and a subsequent heat treatment. The Cu--Ti compound film increases the adhesion force between the Cu alloy film and the TiN film while the W film protects the metallic interconnection against oxidation and corrosion.

REFERENCES:
patent: 4866008 (1989-09-01), Brighton et al.
patent: 4985750 (1991-01-01), Hoshino
J. S. H. Cho et al., "Copper Interconnection with Tungsten Cladding for ULSI", pp. 39 and 40.
Kazuhide Ohno et al., "Fine Copper Pattern Formation Using RIE with a SICI.sub.4, N.sub.2, Cl.sub.2 and NH.sub.3 Mixture, and Its Electromigration Characteristics", Abstract No. 318, pp. 486 and 487.
Y. Nakasaki et al., "Orientation Control of Cu Interconnects . . . Interfacial energy of Cu/Barrier Metal Structures", Abstract No. 30p-ZH-7, p. 707.

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