Semiconductor device manufacturing: process – Making regenerative-type switching device
Patent
1997-09-29
1999-09-28
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making regenerative-type switching device
438138, H01L 21332
Patent
active
059602643
ABSTRACT:
A parasitic transistor of an insulated gate semiconductor device does not easily turn on, so that an SOA of the insulated gate semiconductor device is improved. P.sup.+ semiconductor layers (45) having a higher impurity concentration than that N.sup.+ emitter layers (44) are disposed so that the P.sup.+ semiconductor layers (45) overlap adjacent edges of the N.sup.+ emitter layers (44) of a U-type IGBT and so that bottom portions of the P.sup.+ semiconductor layers (45) contact P base layers (43). An emitter electrode (51) contacts the P base layers (43) through the P.sup.+ semiconductor layers (45). A trench pitch is small, and therefore, a parasitic transistor which is formed by an N.sup.+ emitter region (4), a P base layer (3) and an N.sup.- layer (2) does not easily turn on.
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Mitsubishi Denki & Kabushiki Kaisha
Nguyen Tuan H.
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