Power semiconductor device having an insulated gate field effect

Details Power semiconductor device having an insulated gate field effect Power semiconductor device having an insulated gate field effect

1994-02-15

1995-03-14

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257137, 257146, 257154, 257155, 257335, 257337, 257341, 257378, H01L 2974, H01L 2702

Patent

active

053979052

ABSTRACT:
In a semiconductor device having insulated gate field effect transistors and bipolar transistors, a buried layer of a first conductivity type having an impurity concentration higher than that of a second layer of the first conductivity type is disposed in at least a lower region between a second layer of a second conductivity type and a third layer of the second conductivity type and in the vicinity of a boundary between the second layer of the first conductivity type, which serves as back gates of the field effect transistors and base layers of the bipolar transistors, and the first layer of the second conductivity type.

REFERENCES:
patent: Re32784 (1988-11-01), Nakagawa et al.
patent: 4821095 (1989-04-01), Temple
patent: 5200638 (1993-04-01), Kida et al.
patent: 5245202 (1993-09-01), Yasukazu
patent: 5304802 (1994-04-01), Kumagai
Ajit et al., "The Minority Carrier Injection Controlled Field-Effect Transistor (MICFET); A New MOS-Gated Power Transistor Structure." IEEE Transactions on Electron Devices, vol. 39, No. 8, Aug. 1992, pp. 1955-1960.

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