Method of producing semiconductor device with insulating film ha

Details Method of producing semiconductor device with insulating film ha Method of producing semiconductor device with insulating film ha

1992-12-24

1995-03-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437238, 437 52, 437919, 148DIG14, H01L 2102

Patent

active

053977483

ABSTRACT:
A thermal oxidation method for producing a semiconductor device having a capacitor insulating film structure capable of making a thin film having a small leakage current and small temperature dependence of the leakage current. In the insulating film, a silicon nitride film with a small electron mobility and a silicon oxide film with a small hole mobility are alternately laminated in order of the nitride film/oxide film
itride film/oxide film from a lower electrode side. A current component such as electrons flowing in this insulating film structure is limited by the layer with the smaller mobility to reduce the leakage current. An oxide film thickness of approximately several .ANG. can thus be strictly controlled. By forming the silicon nitride film between the high dielectric oxide film and the electrode, the reaction of the silicon electrode and the high dielectric oxide film can be prevented.

REFERENCES:
"Formation of PZT Films by MOCVD" by K. Kashihara et al., International Conference on Solid State Devices and Materials, Yokohama, 1991.
"The Reliability of Trench Capacitors with O-N Double-Layer Films", Ohno et al., Mitsubishi Electric Corp., Technical Report of the Electronic Information and Communication Society of Japan.
Fukuda et al., "High-Performance Scaled Flash-Type EEPROMs with Heavily Oxynitrided Tunnel Oxide Films", IEDM 1992, pp. 17.6.1-17.6.4.

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