Method of fabricating a semiconductor device having a triple wel

Details Method of fabricating a semiconductor device having a triple wel Method of fabricating a semiconductor device having a triple wel

1992-10-02

1995-03-14

Fourson, George

Fishing, trapping, and vermin destroying

437149, 437 52, 437952, 437924, H01L 2176

Patent

active

053977343

ABSTRACT:
A method of fabricating a semiconductor device having a p-type semiconductor substrate and a p-well for memory cells which is formed in the substrate is disclosed. N-type impurities are implanted into a region of the substrate in which the p-well for memory cells is to be formed. Then, the region is selectively and thermally oxidized to form an oxide film on the first region, and the n-type impurities are simultaneously diffused in the substrate. After the oxide film is removed, the p-well is formed within the region of the substrate in which the n-type impurities are diffused.

REFERENCES:
patent: 5157003 (1992-10-01), Tsuji et al.
patent: 5294556 (1994-03-01), Kawamura

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