Method for the construction of field oxide film in semiconductor

Details Method for the construction of field oxide film in semiconductor Method for the construction of field oxide film in semiconductor

1994-05-20

1995-03-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437 70, 437 72, 437 73, 257509, H01L 2176

Patent

active

053977335

ABSTRACT:
Methods for the construction of field oxide film is disclosed. The methods facilitates the control of the length and thickness of L-shaped spacer, overcoming some difficulties in processing a semiconductor device. Thus, the stresses and defects of semiconductor substrate can be greatly diminished. In addition, the methods bring about an effect of easily achieving the separation process of semiconductor device, an essential process. Superior in suppressing Bird's beak, the methods are capable of securing more large active region in a semiconductor device.

REFERENCES:
patent: 4755477 (1988-07-01), Chao
patent: 4829019 (1989-05-01), Mitchell et al.
patent: 4897364 (1990-01-01), Nguyen et al.
patent: 5137843 (1992-08-01), Kim et al.
patent: 5173444 (1992-12-01), Kawamura
patent: 5196367 (1993-03-01), Lu et al.
patent: 5246537 (1993-09-01), Cooper et al.
patent: 5252511 (1993-10-01), Bhan et al.
patent: 5256895 (1993-10-01), Bryant et al.
patent: 5294563 (1994-03-01), Rao

Affiliated with

Also associated with

Rating

Method for the construction of field oxide film in semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the construction of field oxide film in semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the construction of field oxide film in semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-713523