Method for making an edge junction schottky diode

Metal working – Method of mechanical manufacture – Electrical device making

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Details

29590, 29571, 29576E, H01L 2120, H01L 21285

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active

046741771

ABSTRACT:
A schottky junction diode is provided by a substrate (32) having a mesa stacked thin horizontal semiconductor layer (34, 50) with an exposed edge (36) at a generally vertical side (38) of the mesa, and a schottky metal layer (40) having a generally vertical portion (42) over the semiconductor layer edge and forming a generally vertical schottky junction (44) having an area in 10.sup.-8 to 10.sup.-10 cm.sup.2 range for operation at millimeter and submillimeter wave frequencies.

REFERENCES:
patent: 4034394 (1977-07-01), Kams et al.
patent: 4098921 (1978-07-01), Calviello
patent: 4199860 (1980-04-01), Beelitz et al.
patent: 4292643 (1981-09-01), Kellner et al.
patent: 4312113 (1982-01-01), Calviello
patent: 4499656 (1985-02-01), Fabian et al.
patent: 4549194 (1985-10-01), Calviello

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