Method of making a narrow gate electrode for a field effect tran

Details Method of making a narrow gate electrode for a field effect tran Method of making a narrow gate electrode for a field effect tran

1995-01-25

1996-07-23

Fourson, George

Fishing, trapping, and vermin destroying

437177, 437912, H01L 21265, H01L 2144

Patent

active

055389104

ABSTRACT:
A method of producing a field effect transistor that includes forming a step in a compound semiconductor substrate, forming a first insulating side wall at the step, forming an etch blocking layer on the substrate, removing the first insulating side wall, and etching the substrate not protected by the etch blocking layer to produce a recess. Subsequently, a second insulating side wall is formed at the sides of the recess, a refractory metal and a low resistance metal are sequentially deposited and formed as a gate electrode, and finally, source and drain electrodes are formed.

REFERENCES:
patent: 4997788 (1991-03-01), Martens et al.
patent: 5138409 (1992-08-01), Kawai

Affiliated with

Also associated with

Rating

Method of making a narrow gate electrode for a field effect tran does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a narrow gate electrode for a field effect tran, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a narrow gate electrode for a field effect tran will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-712626