Process for producing mask ROM

Details Process for producing mask ROM Process for producing mask ROM

1995-01-30

1996-07-23

Thomas, Tom

Fishing, trapping, and vermin destroying

437 45, 437982, 437 48, 148DIG133, H01L 218246

Patent

active

055389066

ABSTRACT:
A process for producing a semiconductor device, comprising the steps of: (i) forming a transistor having a gate electrode, channel region and source/drain regions on a semiconductor substrate, followed by forming an interlayer insulation film on the entire semiconductor substrate including the transistor; (ii) forming a contact hole extending to either of the gate electrode and each of source/drain regions in the interlayer insulation film on the gate electrode or source/drain regions of the transistor; (iii) forming a resist mask having an opening above the channel region of the transistor on the interlayer insulation film, and implanting ions into the channel region by using the resist mask to write data; (iv) annealing the entire semiconductor substrate at a temperature of about 700.degree. C. to about 800.degree. C. in an atmosphere of an inert gas; and (v) forming a wiring.

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