Method for heating semiconductor wafer by means of application o

Details Method for heating semiconductor wafer by means of application o Method for heating semiconductor wafer by means of application o

1983-10-04

1985-03-12

Envall, Jr., Roy N.

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

219405, 118725, H01L 21324, F27D 1102

Patent

active

045047308

ABSTRACT:
Disclosed herein is a heating method of a semiconductor wafer by means of application of radiated light. The wafer is additionally heated by subsidiary heating device which per se is heated upon exposure to the radiated light and is arranged in contact with the surface of the circumferential edge or a surface portion lying in the vicinity of the circumferential edge of the semiconductor wafer. The ratio of the characteristic value (.alpha.) of the subsidiary heating device to that (.beta.) of the wafer is limited to 0.7 to 1.3, said .alpha. and .beta. being expressed respectively by the following formulae: ##EQU1## where .eta..sub.1, .eta..sub.2 are reflectivities, .rho..sub.1, .rho..sub.2 are specific gravities (g/cm.sup.3), d.sub.1, d.sub.2 are thicknesses (cm) and C.sub.1, C.sub.2 are specific heats (joule/g..degree.C.) of the subsidiary heating device and semiconductor wafer, respectively. The above heating method is effective in preventing the occurrence of "warping" and "slip line".

REFERENCES:
patent: 3471326 (1969-10-01), Kappelmeyer
patent: 3539759 (1970-11-01), Spiro
patent: 3836751 (1974-09-01), Anderson
patent: 4101759 (1978-07-01), Anthony
patent: 4113547 (1978-09-01), Katz
patent: 4339645 (1982-07-01), Miller

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