Photoresist material

Details Photoresist material Photoresist material

1983-05-31

1985-03-12

Schofer, Joseph L.

Synthetic resins or natural rubbers -- part of the class 520 ser

Synthetic resins

Mixing of two or more solid polymers; mixing of solid...

5253292, 5253303, 5253314, 5253334, 5253593, 526284, C08F 824

Patent

active

045046310

ABSTRACT:
The photoresist material comprises a polymer having chloromethyl groups introduced therein and containing 2-isopropenylnaphthalene as one component, an average substitution degree of the chloromethyl groups based on the polymer is within a range of 0.2 to 5.
The photoresist material has a high glass transition point, a high sensitivity to radiation and an excellent dry etching resistance, whereby it is suitably used for the manufacture of a semiconductor element using radiation and provides a good resolution on etching.

REFERENCES:
patent: 2694702 (1954-11-01), Jones
patent: 3009906 (1961-11-01), Eichhorn et al.
patent: 3164575 (1965-01-01), Welch et al.
patent: 3297648 (1967-01-01), Corte et al.
patent: 3311602 (1967-03-01), Raley, Jr.
patent: 3607989 (1971-09-01), Sonnabend

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