High-speed double-heterostructure bipolar transistor devices

Details High-speed double-heterostructure bipolar transistor devices High-speed double-heterostructure bipolar transistor devices

1996-06-03

1997-04-29

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257197, 257623, 257626, 257586, 257593, H01L 29201

Patent

active

056252064

ABSTRACT:
The total base-collector capacitance of a double-heterostructure bipolar transistor device is reduced by removing semiconductor material from the extrinsic regions and replacing the removed material with a relatively-low-dielectric-constant material, The base-collector capacitance is further reduced by using a composite subcollector structure that permits the extrinsic regions to be made thicker than the intrinsic region of the device.

REFERENCES:
patent: 5070028 (1991-12-01), Tews et al.
patent: 5206524 (1993-04-01), Chen et al.
patent: 5345097 (1994-09-01), Nakagawa
patent: 5445976 (1995-08-01), Henderson et al.
patent: 5525818 (1996-06-01), Hill

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