Method of making field oxide regions

Details Method of making field oxide regions Method of making field oxide regions

1982-06-04

1985-03-12

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29576W, 29578, 29580, H01L 2122

Patent

active

045043337

ABSTRACT:
A semiconductor device wherein an oxide film constituting a field region is buried in a semiconductor substrate to make the surface of the field region flush with the top surface of an element region, which is characterized in that another insulating film is buried between the oxide film and the element region. Said another insulating film allows the formation of a larger contact hole.
A method for manufacturing such a semiconductor device which is characterized in making use of V-grooves formed in a lift-off process.

REFERENCES:
patent: 3646665 (1972-04-01), Kim
patent: 3766637 (1973-10-01), Norris et al.
patent: 4335391 (1982-06-01), Morris
patent: 4407851 (1983-10-01), Kurosawa et al.
patent: 4419813 (1983-12-01), Iwai
Preprint for 28th Applied Physics Lecture Meeting, 1981, p. 592, 31a-N-5 (1981) by Kuroaswa et al.

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