Method for annealing semiconductors with a planar source compose

Details Method for annealing semiconductors with a planar source compose Method for annealing semiconductors with a planar source compose

1983-07-14

1985-03-12

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 357 91, 219354, H01L 21265

Patent

active

045043230

ABSTRACT:
A method for annealing semiconductors wherein a semiconductor wafer is placed on a table and a plurality of flash discharge lamps are disposed in a plane parallel and adjacent to the semiconductor wafer. A plane mirror is disposed in a plane parallel and adjacent to the plane of the flash discharge lamps on the side opposite from the table. The semiconductor wafer is exposed to irradiation by light from the flash discharge lamps, whereby the wafer is instantaneously annealed uniformly over the entire area thereof.

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Cohen et al., Appl. Phys. Letts. 33 (1978), 751.
Powell et al., Appl. Phys. Letts. 39 (1981), 150.
Bomke et al., Appl. Phys. Letts. 33 (1978), 955.

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