Method for manufacturing a charge splitting resistive layer for

Details Method for manufacturing a charge splitting resistive layer for Method for manufacturing a charge splitting resistive layer for

1980-08-18

1983-10-25

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29589, 29591, H01L 21283, H01L 3118

Patent

active

044110596

ABSTRACT:
An improved semiconductor gamma camera is disclosed. The gamma camera includes a p-i-n semiconductor diode which detects the presence and energy of gamma radiation from a source. Typically the source is radioactive material in a patient organ which is detected and then interpreted by a doctor while diagnosing the condition of that organ. The detector includes an improved electrical connection technique to allow the p-i-n diode to be connected to electronic circuitry necessary to provide spatial and energy information. In the improved camera first a passivation layer is deposited on both faces of the p-i-n diode and then a resistive layer is applied to form a reliable easily reproduced electrical contact to the junction. These two layers in combination prevent foreign matter from contacting the semiconductor material comprising the detector while providing interconnection to the electronic circuitry.

REFERENCES:
patent: 3570114 (1971-03-01), Bean et al.
patent: 3748549 (1973-07-01), Milch et al.
patent: 3761711 (1973-09-01), Hall
patent: 3890506 (1975-06-01), Berninger
patent: 3898686 (1975-08-01), Conradi
patent: 4029965 (1977-06-01), Carlson et al.
patent: 4055765 (1977-10-01), Gerber et al.
patent: 4208781 (1980-06-01), Rao et al.

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