Semiconductor device having superlattice structure

Details Semiconductor device having superlattice structure Semiconductor device having superlattice structure

1984-05-07

1986-07-29

Edlow, Martin H.

357 16, 357 17, H01L 2712

Patent

active

046033408

ABSTRACT:
When two indirect only slightly different semiconductor materials having a suitable band gap, for example, AlAs and Al.sub.0.8 Ga.sub.0.2 As, are grown epitaxially one onto the other in layers of a few unit cell layers thick, the electronic band structures are folded so that the indirect minimum of the conduction band is displaced from the edge of the Brillouin zone to the center. The two indirect materials then constitute a superlattice with a band transition with a band gap of 2.2 eV.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki et al.
patent: 4261771 (1981-04-01), Dingle et al.

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