Method of making mask pattern utilizing sizing dependent on mask

Details Method of making mask pattern utilizing sizing dependent on mask Method of making mask pattern utilizing sizing dependent on mask

1998-06-25

1999-09-28

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 22, 430 30, G03F 900

Patent

active

059586320

ABSTRACT:
A method of making a mask pattern is provided for achieving an alignment mark closer to the size of design pattern with any mask material and with any type and size of target pattern so that overlay accuracy of micro target pattern is improved. Sizing processing is performed on an alignment mark pattern (design pattern) in each step of pattern formation process, depending on a mask material (resist) and a type and a size of a target pattern. A sizing pattern thereby formed is printed on a mask substrate. The form and size of printed pattern is substantially equal to the alignment mark pattern of the design size.

REFERENCES:
patent: 5208124 (1993-05-01), Sporon-Fiedler et al.
patent: 5432714 (1995-07-01), Chung et al.
patent: 5792581 (1998-08-01), Ohnuma

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