Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1996-09-27
1999-09-28
Nguyen, Nam
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430296, 430325, 430942, G03F 900
Patent
active
059586265
ABSTRACT:
A method for dividing a pattern according to the present invention is used in a charged particle beam projecting apparatus, in which: a plurality of block patterns into which a projected pattern to be projected on a substrate is divided are respectively formed in a plurality of regions of a mask; the plurality of regions of the mask are successively irradiated with a charged particle beam so that the block patterns are successively projected on the substrate; and as a result the projected pattern is formed on the substrate. The method includes a step of dividing the projected pattern into the block patterns by parting lines which are plotted in accordance with profiles of pattern elements that constitute the projected pattern when the block patterns are determined.
REFERENCES:
patent: 4388386 (1983-06-01), King et al.
patent: 4426584 (1984-01-01), Bohlen et al.
patent: 4451544 (1984-05-01), Kawabuchi
patent: 5189306 (1993-02-01), Frei
patent: 5260151 (1993-11-01), Berger et al.
patent: 5424173 (1995-06-01), Wakabayashi et al.
patent: 5432714 (1995-07-01), Chung et al.
patent: 5528048 (1996-06-01), Oae et al.
patent: 5773171 (1998-06-01), Lee et al.
Nguyen Nam
Nikon Corporation
VerSteeg Steven H.
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