Method of deposition of silicon in fine crystalline form

Details Method of deposition of silicon in fine crystalline form Method of deposition of silicon in fine crystalline form

1979-07-18

1984-01-17

Bernstein, Hiram H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

156613, C30B 2306

Patent

active

044264089

ABSTRACT:
Method of deposition of silicon in fine crystalline form upon a substrate from a silicon-containing reaction gas which includes, at a set mole ratio of the reaction gas and throughput selected for the deposition process, setting the deposition rate-determining temperature of the substrate, at the beginning of the deposition, at a temperature at least equal to optimal temperature for deposition of silicon thereon and, in accordance with consequent increase in thickness of the silicon deposited on the substrate, gradually reducing the temperature of the substrate while maintaining at a minimal value the other parameters determining the rate of deposition.

REFERENCES:
patent: 3120451 (1964-02-01), Schmidt et al.
patent: 3172857 (1965-03-01), Sirtl
patent: 3341359 (1967-09-01), Rummel
patent: 3536522 (1970-10-01), Cecil et al.

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