Method for forming an electrode for a compound semiconductor

Details Method for forming an electrode for a compound semiconductor Method for forming an electrode for a compound semiconductor

1992-10-26

1994-02-08

Maples, John S.

Fishing, trapping, and vermin destroying

437197, 437202, 437247, H01L 21441, H01L 21324

Patent

active

052847985

ABSTRACT:
On the surface of n-type layer of Ga.sub.1-x Al.sub.x As (0.ltoreq..times..ltoreq.1) having n-type layer, Au layer is formed as a first layer, and alloying treatment is performed after Ge layer, Ni layer and Au layer are sequentially formed. The first Au layer, the second Ge layer, the third Ni layer and the fourth Au layer have the following thickness:

REFERENCES:
patent: 4927782 (1990-05-01), Davey et al.
"Contact Resistances of Au-Ge-Ni, Au-Zn and Al to III-V Compounds"--Shih et al, Solid State Electronics, 1972, vol. 15, pp. 1177-1180.

Affiliated with

Also associated with

Rating

Method for forming an electrode for a compound semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming an electrode for a compound semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming an electrode for a compound semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-697626