Methods of programming and reading one time programmable read on

Details Methods of programming and reading one time programmable read on Methods of programming and reading one time programmable read on

1998-06-24

1998-11-03

Nelms, David

Static information storage and retrieval

Read only systems

Semiconductive

36518518, G11C 1700, G11C 1604

Patent

active

058318941

ABSTRACT:
The read only memory includes a number of word lines and a number of bit lines. The word lines and the bit lines are arranged in a matrix. Between every two of the bit lines and on every word line there forms a memory cell. The two bit lines of the memory cell are a first bit line and a second bit line. The method of programming includes the following steps. The first bit line is supplied with a first voltage. The second bit line is supplied with a second voltage. The word line is supplied with a third voltage. Bit lines at the same side of the first bit line are supplied with the first voltage. Bit lines at the same side of the second bit line are supplied with the second voltage.

REFERENCES:
patent: 5283759 (1994-02-01), Smith
patent: 5675547 (1997-10-01), Koga
patent: 5745411 (1998-04-01), Usami

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