Process for formation of delta-doped quantum well field effect t

Details Process for formation of delta-doped quantum well field effect t Process for formation of delta-doped quantum well field effect t

1992-08-17

1994-02-08

Kunemund, Robert

Fishing, trapping, and vermin destroying

437105, 437107, 437126, 437133, 437909, 437976, H01L 21265

Patent

active

052847829

ABSTRACT:
A process for formation of a delta-doped quantum well field effect transistor is disclosed, and the transistor includes: a substrate, a super lattice, a buffer layer, quantum wells, a cap layer, and an ohmic layer. Then a drain, a source and a gate are formed on the ohmic layer. Each of the quantum wells is formed in such a manner that: a first GaAs layer is formed by applying a metalorganic chemical vapor deposition process under a low reaction pressure; then an Si impurity such as SiH4 or Si2H6 is delta-doped into the layer; and then, a second GaAs layer is formed by applying the metalorganic chemical vapor deposition process under the same condition, thereby forming the GaAs/AlGaAs delta-doped quantum well field effect transistor of the present invention, having the advantage of economy.

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Schubert "Delta Doping III-V Compound Semiconductors: Fundamentals and Device Applications", J. Vac. Sci. & Tech. A 8(3), May/Jun., 1990, pp. 2980-2996.

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