Method for increasing the electric strength of a multi-layer sem

Details Method for increasing the electric strength of a multi-layer sem Method for increasing the electric strength of a multi-layer sem

1992-11-12

1994-02-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 24, 437 26, 437959, 148DIG128, 148DIG23, 148DIG161, 257156, 257171, H01L 4900

Patent

active

052847802

ABSTRACT:
For increasing the electric strength of a semiconductor component that comprises a sequence of semiconductor layers of alternating conductivity type and which is adapted to be charged with a voltage that biases at least one of the p-n junctions that separate the layers from one another in the non-conducting direction, the carrier life is reduced only in the lateral region of the edge termination of this p-n junction. The carrier life is reduced by irradiation with electrons or protons or by introducing atoms having recombination properties.

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Mueller; Grundlagen der Halbleiter-Elektronik, Springer-Verlag, Berlin-Heidelberg-New York, 1971, pp. 93-95.
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