Process for producing crackstops on semiconductor devices and de

Details Process for producing crackstops on semiconductor devices and de Process for producing crackstops on semiconductor devices and de

1995-07-13

1997-09-09

Fourson, George

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

438462, 438669, H01L 21304

Patent

active

056656556

ABSTRACT:
A process for making a crackstop on a semiconductor device is disclosed. The process involves creating and metallizing a groove surrounding the active region on a chip at the same time as other functional metallization is occurring, and then selectively etching out the metal in the groove after final passivation. In various embodiments the groove passes through the surface dielectric or the semiconductor substrate. In one embodiment the groove is replaced by hollow metal rings that can be stacked through multiple dielectric layers.

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patent: 5157001 (1992-10-01), Sakuma
"Polymide or KTFR in Kerf During Dicing/Chip Sawing" IBM Technical Disclosure Bulletin, 27 (4A) pp. 1962-1963 (Sep. 1984).
"Method of Preventing Damage to Integrated Circuit Chips during Wafer Dicing" IBM Technical Disclosure Bulletin, 34 (12), pp. 311-312 (May, 1992).

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