Method of making a chimney capacitor

Details Method of making a chimney capacitor Method of making a chimney capacitor

1995-06-05

1997-09-09

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

H01L 2170

Patent

active

056656262

ABSTRACT:
A chimney capacitor is formed having two plates, of which each is disposed above and contacts a corresponding electrical contact. The electrical contacts facilitate electrical access to the plates of the chimney capacitor. One of the electrical contacts may comprise part of a general wiring layer that may be used for both electrically accessing the capacitor and for general wiring within the IC chip. Formation of the chimney capacitor proceeds by first forming two electrical contacts on an integrated circuit ("IC") chip. A planar insulating layer is formed thereover, and the capacitor is formed at least partially within the planar insulating layer such that each plate is electrically connected to a corresponding electrical contact.

REFERENCES:
patent: 5389566 (1995-02-01), Lage
patent: 5389568 (1995-02-01), Yun
patent: 5492849 (1996-02-01), Park

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