Method of manufacturing a semiconductor device

Metal working – Method of mechanical manufacture – Assembling or joining

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29575, 29578, 148 15, 148DIG55, 148DIG93, 427 531, 357 42, 219121L, 219121LF, 219121LE, H01L 21263, B23K 2600

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046024204

ABSTRACT:
A method of manufacturing a semiconductor device including the steps of forming a passivation film, which has an opening exposing that region of the interlayer insulation film formed on the fuse element, which corresponds to the region to be melted of fuse element, melting the region of the fuse element to be melted by radiating a laser beam on the exposed region of the interlayer insulation film through the opening, and the step of forming a protective resin layer on the whole main surface of the resultant structure after melting is completed.

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Kristoff et al., "Process for Ething Self-Aligned Concentric Vial Contact Holes", IBM Tech. Disc. Bull., vol. 22, No. 12, May 1980, pp. 5321-5322.
Braslav et al., "Laser Engineering Change Capability for Microcircuit Metallurgy", IBM Tech. Disc. Bull., vol. 21, No. 9, Feb. 1979, pp. 3838-3839.
IBM Technical Disclosure Bulletin, vol. 23, No. 10, Mar. 1981.

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