Voltage-tuned millimeter-wave amplifier and method for tuning

Amplifiers – With amplifier condition indicating or testing means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

330 68, 330277, 330286, 330296, 330297, H03F 3193

Patent

active

058314768

ABSTRACT:
A method (140) for tuning millimeter-wave FET amplifiers (20) during manufacture, through the application (144) of a gate bias voltage (52) so as to tune the FET (22) of the amplifier (20) to match an input circuit (24), and through the application (146) of a drain bias voltage (74) so as to tune the FET (22) of the amplifier (20) to match an output circuit (26), then measuring (150) the frequency response of the amplifier (20). This tuning method (140) is repeated (152) until a predetermined frequency response has been achieved. Once achieved, the predetermined frequency response is realized (154) by permanently fixing the gate bias voltage (52) and the drain bias voltage (74) at the determined values. This iterative method (140) of tuning amplifiers (20) is then repeated for all amplifiers (20) to be tuned.

REFERENCES:
patent: 4924191 (1990-05-01), Erb et al.
patent: 5412235 (1995-05-01), Nakajima et al.
patent: 5412340 (1995-05-01), Tanikoshi

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Voltage-tuned millimeter-wave amplifier and method for tuning does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Voltage-tuned millimeter-wave amplifier and method for tuning, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Voltage-tuned millimeter-wave amplifier and method for tuning will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-693754

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.