Coherent light generators – Particular active media – Semiconductor
Patent
1996-01-11
1998-09-29
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
058155228
ABSTRACT:
An n type lower cladding layer, a quantum well structure active layer, a p type upper cladding layer, and a p type contact layer are epitaxially grown in this order on an n type GaAs substrate, and then a stripe-shaped SiN film extending in the laser resonator length direction and having a length not reaching the vicinity of a region that becomes a laser resonator facet is formed on the contact layer. An In film is formed on the SiN film and the contact layer and then heat treatment is performed, diffusing In to a depth reaching the lower cladding layer and disordering a part of the quantum well structure active layer. The active layer in the vicinity of the laser resonator facet is disordered by diffusing In at a temperature as low as 600.degree. C., and a window structure can be formed without diffusing a dopant impurity at a high temperature.
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Arimoto et al, "150 mW Fundamental-Transverse-Mode Operation of 670 nm Window Laser Diode", IEEE Journal of Quantum Electronics, vol. 29, No. 6, 1993, pp. 1874-1879 Jun.
Bovernick Rodney B.
Kang Ellen E.
Mitsubishi Denki & Kabushiki Kaisha
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