Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Patent
1996-07-26
1998-11-03
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
257737, 257738, 257584, 257587, 257578, H01L 2348, H01L 2352, H01L 2940, H01L 27082
Patent
active
058313370
ABSTRACT:
A vertical transistor is provided on and extends in a first direction along a surface of a substrate. A bump electrode is formed over the transistor and crosses the transistor in a second direction perpendicular to the first direction. The bump electrode is butterfly-shaped and has a first area overlapping the transistor and a second area that does not overlap with the transistor. The size of the second area in the first direction is greater than the size of the first area in the first direction. The bump electrode shape has no interior angle exceeding 270.degree..
REFERENCES:
patent: 5084750 (1992-01-01), Adlerstein
patent: 5349239 (1994-09-01), Sato
patent: 5373185 (1994-12-01), Sato
Sato et al., "Bump Heat Sink Technology--A Novel Assembly Technology Suitble for Power HBTs-", 15th Annual GaAs IC Symposium Technical Digest , 1993, pp. 337-340.
Hasegawa et al, "Bump Heat Sink Technology--A Novel Assembly Technology Suitable for Power HBTs", Technical Report of IEICE, 1994, pp. 1-6.
Sato et al, "Carbon-Doped A1 GaAs/GaAs HBTS with f.sub.MAX =117GHz Grown by MOCVD", technical report of the institute of electronics, information and communication engineers, ed90-135, pp. 19-24, 1991.
Bayraktaroglu et al., "Very High-Power-Density CW Operation of GaAs/AIGaAs Microwave Heterojunction Bipolar Transistors", IEEE Electron Device Letters, vol. 14, No. 10, Oct. 1993, pp. 493-495.
Arroyo T. M.
Saadat Mahshid D.
Sharp Kabushiki Kaisha
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