Insulated gate bipolar transistors

Details Insulated gate bipolar transistors Insulated gate bipolar transistors

1997-02-14

1998-11-03

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257152, 257153, 257173, 257328, 257341, H01L 2974

Patent

active

058312919

ABSTRACT:
A semiconductor device comprises a plurality of IGBT-like cells arranged in groups on a single wafer of silicon. Each group of cells has a unified gate structure and a unified source structure electrically insulated therefrom but physically overlying it. The gate structure of each group of cells is brought via a removable link to a single gate electrode for the whole device, so that the gate connection to any group of cells may be broken by removing the link, thus disabling the corresponding group of cells. Also, each group of cells is provided separately with a built-in controlled shunt conductance between its source structure and its gate structure.

REFERENCES:
patent: 5291050 (1994-03-01), Nishimura
Venkatraman, Prasad and B. Jayant Baliga, "Large Area MOS-Gated Power Devices Using Fusible Link Technology", IEEE Transactions on Electron Devices, vol. 43, No. 2, pp. 347-351 (Feb. 1996).

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