Semiconductor static random access memory device

Details Semiconductor static random access memory device Semiconductor static random access memory device

1996-01-17

1998-11-03

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 67, 365156, H01L 27108

Patent

active

058312854

ABSTRACT:
A first word line connects the gate electrodes of first transfer transistors in adjacent memory cells. A second word line connects the gate electrodes of second transfer transistors in adjacent memory cells. A ground line connects the source regions of first and second driver transistors. The first and second word lines and ground line are formed by a wiring layer different from the wiring layer that forms the gate electrodes of the first and second transfer transistors. The ground line shields the first and second driver transistors, TFTs and the like. Drain contacts include chamfered sides between which the ground line is disposed.

REFERENCES:
patent: 5005068 (1991-04-01), Ikeda et al.
patent: 5239196 (1993-08-01), Ikeda et al.
patent: 5363324 (1994-11-01), Hashimoto et al.
patent: 5378649 (1995-01-01), Huang
patent: 5436506 (1995-07-01), Kim et al.
Nikkei Microdevice, Jun. 1991, p. 47.
International Electron Device Meeting 91, 1991, pp. 477-482.
International Electron Device Meeting 93, 1993, pp. 809-812.
1984 IEEE International Solid-State Circuits Conference, Feb. 23, 1984, pp. 226-227.

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