Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1996-03-15
1998-11-03
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 36, 257 39, 505162, 505170, 505832, 505859, 505861, 326 3, 327367, 327528, 365162, H01L 2906, H01L 310256, H01L 3922, H03K 1792
Patent
active
058312781
ABSTRACT:
A three-terminal device constructed from a Josephson junction with one or more asymmetric control lines is disclosed. The device is constructed with high temperature superconducting materials. The junction can be a bicrystal, SNS (Superconducting-Normal-Superconducting) or any other type of high temperature superconductor junction. The control line is either a conducting or superconducting material which is electrically isolated from the junction but inductively coupled into the junction. A portion of the control line is approximately directly above the junction and has current which at least partially flows parallel or nonparallel to current flowing across the junction. The control line current alters the magnetic field within the junction which changes the critical current of the junction. The junction is in a superconducting or resistive state depending on whether the bias current of the junction is greater than or less than the control current. Logic gates, including an XOR gate, are formed using this device and one or more control lines.
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Conductus, Inc.
Saadat Mahshid D.
Wilson Allan R.
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