Charged particle beam lithography method and apparatus thereof

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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2504911, G06F 1546

Patent

active

058312730

ABSTRACT:
A method of adjusting a shaped beam in a charged particle beam writing method of writing a pattern on the surface of a written target using the above shaped beam is disclosed. The above method of adjusting the above shaped beam consists of a process for measuring the point of the center of the intensity of the shaped beam projected on the surface of the written target, a process for calculating a projected position correcting amount for correcting the projected position on the surface of the written target of the shaped beam based upon the measured point of the center of the intensity and a process for correcting the projected position on the surface of the written target of the shaped beam by the obtained projected position correcting amount. According to this method of correcting the projected position of the beam based upon the point of the center of the intensity of the shaped beam, a positioning error in a connection between the parts of patterns written on the surface of the written target can be greatly reduced.

REFERENCES:
patent: 5305225 (1994-04-01), Yamaguchi et al.
Japan Society of Applied Physics and Related Societies, 42nd Spring Meeting, 1995, M. Ohno et al, 2 pages.

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