Static information storage and retrieval – Floating gate – Particular biasing
Patent
1990-06-22
1994-02-08
Popek, Joseph A.
Static information storage and retrieval
Floating gate
Particular biasing
257319, G11C 1140
Patent
active
RE0345350
ABSTRACT:
The dielectric between the floating gate and the control gate, in an EEPROM or other floating gate memory is made by forming an oxide
itride stack over the (first polysilicon) control gate. This dielectric not only provides a very high specific capacitance, which is desired to provide tight coupling of the control to the floating gate, but also provides excellent dielectric integrity. Moreover, the thickness of this dielectric layer does not exhibit any uncontrolled increase during exposure to second gate oxidation. Thus, the polysilicon-to-polysilicon dielectric is not only of high specific capacitance and high integrity, it is also very uniform.
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Haken Roger A.
Paterson James L.
Donaldson Richard L.
Heiting Leo N.
Lindgren Theodore D.
Popek Joseph A.
Texas Instruments Incorporated
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