Method for detecting erroneously programmed memory cells in a me

Details Method for detecting erroneously programmed memory cells in a me Method for detecting erroneously programmed memory cells in a me

1998-07-22

1999-04-27

Phan, Trong

Static information storage and retrieval

Floating gate

Particular biasing

3651853, 365218, G11C 1604, G11C 700

Patent

active

058986200

ABSTRACT:
A method for detecting erroneously programmed memory cells of a memory, in particular for detecting overprogrammed memory cells of a flash semiconductor memory. The memory includes a plurality of memory cells, which can be subdivided into a number of blocks that can be erased as a unit, which in turn can be divided into a group of subblocks that can be programmed as a unit. The erroneous programming of a memory cell of a subblock causes each subblock of a number of subblocks that can be represented by an erroneously programmed subgroup to have a similarly erroneously programmed memory cell.

REFERENCES:
patent: 5745410 (1998-04-01), Yiu et al.
patent: 5822245 (1998-10-01), Gupta et al.

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