Semiconductor laser and method of fabricating same

Details Semiconductor laser and method of fabricating same Semiconductor laser and method of fabricating same

1997-09-09

2000-02-29

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 44, 372 45, 372 26, 372 29, H01S 319

Patent

active

060318589

ABSTRACT:
A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.

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