Semiconductor device having a current-constricting spaces and me

Details Semiconductor device having a current-constricting spaces and me Semiconductor device having a current-constricting spaces and me

1997-05-20

2000-02-29

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

257 79, H01S 3085

Patent

active

060318570

ABSTRACT:
A burying-heterostructure (BH) type semiconductor laser having a constricted mesa which has an active region. The laser has two spaces, located above and below the active region, for constricting a current to reduce a leakage current. The laser further has a first group of columns extending through the space located above the active region, and a second group of columns extending through the space located below the space. The columns of the first group are staggered in a vertical plane, with respect to the columns of the second group.

REFERENCES:
patent: 4870468 (1989-09-01), Kinoshita et al.
patent: 4870469 (1989-09-01), Nishizawa et al.
patent: 4958202 (1990-09-01), Kinoshita et al.
patent: 5021361 (1991-06-01), Kinoshita et al.
Y. Hirayama, et al., "High Speed 1.5 .mu.m Self-Aligned Constricted Mesa DFB Lasers Grown Entirely by MOCVD," IEEE Journal of Quantum Electronics, vol. 25, No. 6, pp. 1320-1323, Jun., 1989.

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