High dielectric constant capacitor and method of manufacture

Details High dielectric constant capacitor and method of manufacture High dielectric constant capacitor and method of manufacture

1993-02-12

1994-08-02

Reynolds, Bruce A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361311, 3613211, 257306, 257310, 437 60, H01G 101, H01L 2700

Patent

active

053351380

ABSTRACT:
A high storage capacity capacitor for a semiconductor structure includes a barrier layer formed on a polysilicon electrode, a lower electrode, a dielectric layer, and an upper electrode. The dielectric material is formed of a high dielectric constant material such as BaSrTiO.sub.3. In order to protect the barrier layer from oxidation during deposition of the dielectric layer and to provide a smooth surface geometry for depositing the dielectric layer, conducting or insulating spacers are formed on the sidewalls of the barrier layer and lower electrode. A smooth dielectric layer can thus be formed that is less susceptible to current leakage. In addition, the insulating spacers can be formed to completely fill a space between adjacent capacitors and to provide a completely planar surface.

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Koyama et al., "A Stacked Capacitor With (Ba.sub.x Sr.sub.1-x)TiO.sub.3 For 256M DRAM", IEDM 91-823.

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