Diamond-ZnO surface acoustic wave device

Details Diamond-ZnO surface acoustic wave device Diamond-ZnO surface acoustic wave device

1996-08-07

1998-09-29

Dougherty, Thomas M.

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

310313A, H03H 9145, H01L 4108

Patent

active

058149180

ABSTRACT:
The present invention directed to a SAW device comprising a diamond layer a ZnO layer and an SiO.sub.2 layer, which can be operated at the frequency of 2 GHz or higher, with superior durability and less energy loss. The SAW device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention comprises: (i) a diamond layer, (ii) a ZnO layer formed on the diamond layer, the ZnO layer having a thickness t.sub.z, (iii) an interdigital transducer (IDT) formed over the ZnO layer, and (iv) a SiO.sub.2 layer formed over the interdigital transducer onto the ZnO layer, the SiO.sub.2 layer having a thickness of t.sub.s ; wherein parameters kh.sub.z =(2.pi./.lambda.)t.sub.z and kh.sub.s =(2.pi./.lambda.)t.sub.s are given within a region A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-A in a two-dimensional Cartesian coordinate graph having abscissa axis of kh.sub.z and ordinate axis of kh.sub.s, the outer edge of the region A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-A being given by a closed chain in the Cartesian coordinate, consisting of points A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q and R and lines A-B, B-C, C-D, D-E, E-F, F-G, G-H, H-I, I-J, J-K, K-L, L-M, M-N, N-O, O-P, P-Q, Q-R and R-A, as shown in FIG. 1.

REFERENCES:
patent: 5426340 (1995-06-01), Nakahata et al.
patent: 5446329 (1995-08-01), Nakahata et al.
patent: 5565725 (1996-10-01), Nakahata et al.
patent: 5646468 (1997-07-01), Nakahata et al.
Mitsuyu et al., "Structures and SAW Properties of rf-sputtered single-crystalline films of ZnO on sapphire", J. Appl.Phys. 51(5): 2464-2470 (May 1980).

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