Semiconductor laser with an active layer having varying thicknes

Details Semiconductor laser with an active layer having varying thicknes Semiconductor laser with an active layer having varying thicknes

1985-02-07

1987-06-16

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

046740945

ABSTRACT:
A semiconductor laser includes a semiconductor substrate of first conductivity type having a ridge extending in a direction substantially parallel to the direction of the light guide only in the neighborhood of the resonator end surface; a lower cladding layer of first conductivity type, an active layer, and an upper cladding layer of second conductivity type produced one after the other on the substrate in the above-mentioned order in such a manner that the portion of the active layer above the ridge is thinner than the portion of the active layer that is inside the laser resonator removed from the resonator and surface.

REFERENCES:
patent: 4282494 (1981-08-01), Yonezu et al.
patent: 4429395 (1984-01-01), Olsen et al.
patent: 4608695 (1986-08-01), Oda et al.
European Search Report Application No. EP 85 30 1612.
European Search Report Application No. EP 83 30 1600.
"Large Optical Cavity AlGaAs Buried Heterostructure Window Lasers" by H. Blauvelt, et al., Applied Physics Letters, vol. 40 (1982), pp. 1029-1031.
"High Optical Power Density Emission from a Window-Stripe AlGaAs Double-Heterostructure Laser", by Y. Yonezu et al., Applied Physics Letters, May 15, 1979, pp. 637-639.
"Monolithic High-Power Dual-Wavelength GaAlAs Laser Array", M. Wada et al., Applied Physics Letters, 11/15/83, pp. 903 to 905.
"A High-Power, Single-Mode Laser with Twin-Ridge-Substrate Structure", M. Wada et al., Applied Physics Letters, 5/15/83, pp. 853 to 854.
"Visible GaAlAs V-Channeled Substrate Inner Stripe Laser with Stabilized Mode Using p-GaAs Substrate", S. Yamamoto et al., Applied Physics Letters, 3/1/82, pp. 372 to 374.

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