Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-09-25
1999-04-27
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257761, 257763, 257764, 257765, H01L 2348, H01L 2352, H01L 2940
Patent
active
058982213
ABSTRACT:
A semiconductor device having a semiconductor substrate and a wiring layer, which is doped with an impurity, located on the substrate. The semiconductor device has upper and lower wiring layers apart from each other. An electric insulating film electrically insulates between the upper and lower wiring layers. The insulating film has a contact hole. A wiring material is packed with the contact hole to electrically connect the upper and lower wiring layers. The impurity is contained in the lower wiring layer to decrease its resistivity.
REFERENCES:
patent: 4914056 (1990-04-01), Okumura
patent: 5278448 (1994-01-01), Fujii
patent: 5414301 (1995-05-01), Thomas
patent: 5635763 (1997-06-01), Inoue et al.
patent: 5745990 (1998-05-01), Lee et al.
Inoue Yasunori
Mizuhara Hideki
Tanimoto Shin-ichi
Watanabe Hiroyuki
Mintel William
Sanyo Electric Company Ltd.
LandOfFree
Semiconductor device having upper and lower wiring layers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having upper and lower wiring layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having upper and lower wiring layers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-687079