Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-09-12
1999-04-27
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, 257 66, 257 72, H01L 2904, H01L 31036, H01L 2976
Patent
active
058981870
ABSTRACT:
A thin film transistor includes a substrate, a gate electrode on the substrate, an insulating layer on the gate electrode, source and drain electrodes having side surfaces facing each other over the insulating layer, a carrier traveling path between the source and drain electrodes being shorter than a length of the gate electrode, an active layer over the source and drain electrodes and the insulating layer, and a silicide layer on at least one of the side surfaces of the source and drain electrodes.
REFERENCES:
patent: 5166816 (1992-11-01), Kaneko et al.
LG Electronics Inc.
Loke Steven H.
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