Uses for buried contacts in integrated circuits

Details Uses for buried contacts in integrated circuits Uses for buried contacts in integrated circuits

1984-11-05

1987-06-16

James, Andrew J.

357 35, 357 59, 357 34, H01L 2972, H01L 2954, H01L 2710, H01L 2908

Patent

active

046739653

ABSTRACT:
An integrated circuit is made that includes an insulated gate transistor and a buried contact. The buried contact is used to divide an active device area in two discrete parts, that are doped during source-drain doping in other active device mesas of the integrated circuit. Discrete contacts to these regions, along with the buried contact, provide an additional type of electrical component in the integrated circuit, such as a bipolar lateral transistor.

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patent: 3609479 (1971-09-01), Chang-Lin
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patent: 4311532 (1982-01-01), Taylor
patent: 4325180 (1982-04-01), Curran
patent: 4503603 (1985-03-01), Blossfeld

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