Substrate of the silicon on insulator type for the production of

Details Substrate of the silicon on insulator type for the production of Substrate of the silicon on insulator type for the production of

1997-02-25

1999-04-27

Evans, Elizabeth

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

428201, 428210, 428446, 428448, 428688, 4273762, 4273835, B32B 300

Patent

active

058979395

ABSTRACT:
Process for the preparation of a substrate of the silicon on insulator type for the production of transistors. The process comprises the following stages:

REFERENCES:
patent: 4601779 (1986-07-01), Abernathey et al.
patent: 4704302 (1987-11-01), Bruel et al.
patent: 4968636 (1990-11-01), Sugawara
patent: 4997786 (1991-03-01), Kubota et al.
IBM Technical Disclosure Bulletin, vol. 31, No. 8, Jan. 1, 1989, pp. 114/115 XP000104754 "Self-Aligned Quasi-Semiconductor-on-Insulator Cmos Structure".
IEEE Transactions on Electron Devices, vol. ED-32, No. 2, Feb. 1985, "Analysis of Kink Characteristics in Silicon-on-Insulator MOSFET's Using Two-Carrier Modeling", Koichi Kato, et al, pp. 458-462.
Appl. Phys. Lett. 46 (11), Jun. 1, 1985, "Microstructure of Silicon Implanted with high Dose Oxygen Ions", C. Jaussaud, et al., pp. 1064-1066.
Nuclear Instruments & Methods in Physics Research, Section-B: Beam Interactions with Materials and Atoms, vol. B55, No. 1/04, Apr. 2, 1991, pp. 856-859, XP000230740. Bussmann U et al. "Qxygen Implantation Through Patterned Masks: A Method for Forming Insulated Silicon Device Islands While Maintaining a Planar Wafer Surface".

Affiliated with

Also associated with

Rating

Substrate of the silicon on insulator type for the production of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Substrate of the silicon on insulator type for the production of, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate of the silicon on insulator type for the production of will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-685130