Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1977-01-07

1979-02-13

Dost, Gerald A.

Metal working

Method of mechanical manufacture

Assembling or joining

B01J 1700

Patent

active

041387813

ABSTRACT:
In a method for the manufacture of a semiconductor device, comprising selectively forming at least one function region of a semiconductor element by a photoengraving technique using a masking layer and forming an electrode metal layer on an electrode contact surface portion of said substrate adjacent to the function region, the position of the electrode contact portion is determined by subjecting the masking layer on the surface of the substrate to an initial patterning step. This method can be advantageously used to attain high integration of an IC device.

REFERENCES:
patent: 3700507 (1972-10-01), Murray
patent: 3707656 (1972-12-01), DeWitt
patent: 3708360 (1973-01-01), Wakefield et al.
patent: 3798752 (1974-03-01), Fujimoto
patent: 3800411 (1974-04-01), Abbink
patent: 3967981 (1976-07-01), Yamazaki

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