Method for production of semiconductor by glow discharge decompo

Details Method for production of semiconductor by glow discharge decompo Method for production of semiconductor by glow discharge decompo

1985-03-26

1987-01-06

Childs, Sadie L.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 86, 4272481, 427249, 427255, 4272551, 4272552, B05D 306, B05D 512

Patent

active

046346015

ABSTRACT:
The production of a semiconductor by the glow discharge decomposition of a silane type gas is accomplished advantageously by a method which comprises effecting the glow discharge decomposition of introduced silane type gas with a plurality of opposed electrodes disposed substantially perpendicularly to a substrate and insulated from the ground potential and subsequently allowing the product of the decomposition to be deposited on the substrate disposed so as to be exposed to the introduced silane type gas. The semiconductor obtained by this method is free from the drawbacks suffered by the conventional method using a power source of high frequency.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4262631 (1981-04-01), Kubacki
patent: 4410559 (1983-10-01), Hamakawa et al.
patent: 4452828 (1984-06-01), Namba et al.
patent: 4460673 (1984-07-01), Sukigara et al.
patent: 4492736 (1985-01-01), Tanner
patent: 4532150 (1985-07-01), Endo et al.

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