Method for cleaning a semiconductor wafer with an improved clean

Details Method for cleaning a semiconductor wafer with an improved clean Method for cleaning a semiconductor wafer with an improved clean

1996-05-14

1998-09-29

Snay, Jeffrey

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 3, 134 41, C23G 102, B08B 308

Patent

active

058141570

ABSTRACT:
A method for removing metallic and organic contaminations from a surface of a semiconductor wafer comprises cleaning the semiconductor wafer with a cleaning solution which contains a chlorine compound acting as an oxidant and which has a pH value in the range of 1 to 3. The cleaning solution has an oxidation-reduction potential in the range of 800 mV to 1200 mV when measured on the basis of a saturated calomel electrode at a temperature 25.degree. C.

REFERENCES:
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patent: 5464480 (1995-11-01), Matthews
patent: 5470393 (1995-11-01), Fukazawa
patent: 5472513 (1995-12-01), Shiramizu
Kern et al., "Cleaning Solutions Based on Hydrogen Peroxide for Use in Silicon Semiconductor Technology", RCA Review, vol. 31, No. 2, Jun. 1970, pp. 187-205.

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