Method of bonding a III-V group compound semiconductor layer on

Details Method of bonding a III-V group compound semiconductor layer on Method of bonding a III-V group compound semiconductor layer on

1997-12-15

2000-02-29

Dang, Trung

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

438403, 438406, 148DIG12, H01L 2130

Patent

active

060308842

ABSTRACT:
Prior to a heat treatment for bonding a III-V group compound semiconductor layer on a silicon substrate, a thermal stress relaxation layer is provided between the silicon layer and the III-V group compound semiconductor layer thermal stress relaxation layer, having a thermal expansion coefficient equal or near to the thermal expansion coefficient of the III-V group compound semiconductor layer and having a rigidity coefficient being sufficiently large to suppress generation of any crystal defects in the III-V group compound semiconductor layer due to a thermal stress generated in the heat treatment and subsequent cooling stage by the difference in the thermal expansion coefficient between the III-V group compound semiconductor layer and the silicon layer.

REFERENCES:
patent: 4891329 (1990-01-01), Reisman et al.
patent: 5346848 (1994-09-01), Grupen-Shemansky et al.
patent: 5439843 (1995-08-01), Sakaguchi et al.
Y. Lo et al., "Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement", Appl. Phys. Lett., vol. 62, No. 10, pp. 1038-1040, Mar. 1993.
S. Nishi et al., "Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy", Japanese Journal of Applied Physics, vol. 24, No. 6, Jun. 1985, pp. L391-L393.
M. Yamaguchi et al., "Analysis of strained-layer superlattice effects on dislocation density reduction in GaAs on Si substrates", Appl. Phys. Lett., vol. 54, No. 1, Jan. 2, 1989, pp. 24-26.
M. Tachikawa et al., "Dislocation generation of GaAs on Si in the cooling stage", Appl. Phys. Lett., vol. 56, No. 22, May 28, 1990, pp. 2225-2227.
M. Sugo et al., "Heteroepitaxial Growth of InP on Si Substrates", Journal of Crystal Growth, vol. 99, 1990, pp. 365-370.
Y. Lo et al., "Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement", Appl. Phys. Lett., vol. 62, No. 10, Mar. 8, 1993, pp. 1038-1040.
H. Wada et al., "Direct wafer bonding between different semiconductor materials", Applied Physics, vol. 63, No. 1, 1994, pp. 53-56, abridged translation.

Affiliated with

Also associated with

Rating

Method of bonding a III-V group compound semiconductor layer on does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of bonding a III-V group compound semiconductor layer on , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of bonding a III-V group compound semiconductor layer on will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-682537