Method for manufacturing shallow trench isolation structure

Details Method for manufacturing shallow trench isolation structure Method for manufacturing shallow trench isolation structure

1998-12-30

2000-02-29

Fahmy, Wael

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438437, 438525, H01L 2176

Patent

active

060308826

ABSTRACT:
A method for manufacturing shallow trench isolation structure in a substrate, in which by forming a doped region at the upper corners of a trench, the degree of oxidation in that region increases when the liner layer is formed over the exposed surface of the trench. Therefore, thickness of the liner layer at the upper corner regions of the trench is almost the same as in other regions. Consequently, a kink effect is prevented when a gate is subsequently formed over the active region of the substrate.

REFERENCES:
patent: H204 (1987-02-01), Oh et al.
patent: 4523369 (1985-06-01), Nagakubo
patent: 4534824 (1985-08-01), Chen
patent: 4824797 (1989-04-01), Goth
patent: 5436189 (1995-07-01), Reasom
patent: 5780353 (1998-07-01), Omid-Zohoor
patent: 5841170 (1998-11-01), Adan et al.

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