Magnetically enhanced sputter source

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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20419212, C23C 1436

Patent

active

046734805

ABSTRACT:
A circular magnetron sputter source employs a central anode surrounded by an annular cathode of generally inverted conical configuration. The anode structure forms a composite anode and inner magnetic pole piece which is operated at or near ground potential. An outer magnetic pole piece concentrically surrounds the annular cathode. This outer pole piece is electrically isolated from the cathode, and held at or near ground potential. The cathode is operated at a potential of several hundred volts negative with respect to ground. The cathode is held in place by a novel retainer means and has a novel cross section configuration. Magnetic flux is provided either by permanent magnets or by electromagnets or by a combination of both located externally of the vacuum chamber in which the sputter source is operated. Magnetic field lines pass from the outer pole piece and through the cathode, exiting the sputter surface near the outer edge of the cathode. These magnetic field lines form an arch over the cathode by passing directly to the central anode without reentering the uneroded sputter surface of the cathode. In a circular geometry, these arching magnetic field lines form an endless tunnel for confining a glow discharge. The tunnel thus formed is a novel and modified magnetic tunnel in which electrons are reflected electrostatically from the cathode surface near the outer edge of the cathode and reflected by magnetic mirroring near the inner edge. Use of this modified magnetic tunnel leads to improved electrical impedance characteristics of the glow discharge and to improved uniformity in cathode erosion.

REFERENCES:
patent: 3282815 (1966-11-01), Kay et al.
patent: 3616450 (1971-10-01), Clark
patent: 3711398 (1973-01-01), Clark
patent: 3829373 (1974-08-01), Kuehnle
patent: 3878085 (1975-04-01), Corbani
patent: 4046660 (1977-09-01), Fraser
patent: 4060470 (1977-11-01), Clarke
patent: 4100055 (1978-07-01), Rainey
patent: 4155825 (1979-05-01), Fournier
patent: 4162954 (1979-07-01), Morrison, Jr.
patent: 4166783 (1979-09-01), Turner
patent: 4180450 (1979-12-01), Morrison, Jr.
patent: 4198283 (1980-04-01), Class et al.
patent: 4204936 (1980-05-01), Hartsough
patent: 4239611 (1980-12-01), Morrison, Jr.
patent: 4265729 (1981-05-01), Morrison, Jr.
patent: 4282083 (1981-08-01), Kertesz et al.
patent: 4404077 (1983-09-01), Fournier
J. L. Vossen & J. J. Cuomo, "Glow Discharge Sputter Deposition", in Thin Film Processes, (J. L. Vossen & W. Kern, eds.), Ch II-1, pp. 11-73, Academic Press, New York, 1978.
J. A. Thornton & A. S. Penfold, "Cylindrical Magnetron Sputtering", in Thin Film Processes, (J. L. Vossen & W. Kern, eds.), Ch II-2, pp. 75-113, Academic Press, New York, 1978.
D. B. Fraser, "The Sputter & S-Gun Magnetrons", in Thin Film Processes, (J. L. Vossen & W. Kern, eds.), Ch II-3, pp. 115-129, Academic Press, New York, 1978.
R. K. Waits, "Planar Magnetron Sputtering", in Thin Film Processes, (J. L. Vossen & W. Kern, eds.), Ch II-4, pp. 131-173, Academic Press, New York, 1978.
J. D. Jackson, "Classical Electrodynamics", pp. 419-424, John Wiley & Sons, New York, 1962.
N. A. Kroll & A. W. Trivelpiece, "Principles of Plasma Physics", pp. 622-623, McGraw Hill Book Co., New York, 1973.
F. F. Chen, "Introduction to Plasma Physics", pp. 23-31, Plenum Press, New York, 1974.
J. R. Mullaly, "A Crossed Field Discharge Device for High Rate Sputtering", Dow Chemical Co., 1969, U.S. AEC Contract AT(29-1)-1106.

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